AlGaN/GaN异质结中二维电子气多子带解析建模

Multiple sub-bands analytical model of 2DEG properties in the Al_xGa_(1-x)N/GaN heterostructure

为了能够方便精确地研究AxlGa1-xN/GaN异质结中二维电子气性质,提出一种多子带二维电子气的解析模型.利用此模型能够求出二维电子气能带、子能级、波函数和量子特性的解析解.通过模型计算还可以得到二维电子气的分布变化、面电子密度、基带能级、费米能级和势阱随Al组分及AlGaN层厚度的改变.与泊松-薛定谔自洽求解结果相比较,此模型能够给出精确的结论,并避免了泊松-薛定谔自洽求解复杂的数值计算和耗时长等缺点.

To analyze a nitride heterostructure using a simple method, an analytic model is developed for the AlGaN/GaN heterostructure to study two-dimensional electron gas （2DEG） properties. The model is analytical for the energy band, sub-band level and wave function of 2DEG. A comparison of analytical results with complex self-consistent results of the Poisson-Schrodinger equation shows that the complicated numerical calculation and the disadvantage of time-consuming are avoided. We can obtain the variety of 2DEG distribution and sheet density and the shape of the potential well with Al content and thickness of the AlGaN barrier layer using the analytic model.