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1.0 V low voltage CMOS mixer based on voltage control load technique 被引量:1

1.0 V low voltage CMOS mixer based on voltage control load technique
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摘要 A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed, and its operation principle, noise and linearity analysis were also presented. Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating, the load impedance in this proposed mixer is controlled by the LO signal, and it has only two stacked transistors at each branch which is suitable for low voltage applications. The mixer was designed and fabricated in 0.18 tam CMOS process for 2.4 GHz ISM band applications. With an input of 2.44 GHz RF signal and 2.442 GHz LO signal, the measurement specifications of the proposed mixer are: the conversion gain (Gc) is 5.3 dB, the input-referred third-order intercept point (PIIP3) is 4.6 dBm, the input-referred 1 dB compression point (P1dB) is --7.4 dBm, and the single-sideband noise figure (NFSSB) is 21.7 dB. A CMOS active mixer based on voltage control load technique which can operate at 1.0 V supply voltage was proposed,and its operation principle,noise and linearity analysis were also presented.Contrary to the conventional Gilbert-type mixer which is based on RF current-commutating,the load impedance in this proposed mixer is controlled by the LO signal,and it has only two stacked transistors at each branch which is suitable for low voltage applications.The mixer was designed and fabricated in 0.18 μm CMOS process for 2.4 GHz ISM band applications.With an input of 2.44 GHz RF signal and 2.442 GHz LO signal,the measurement specifications of the proposed mixer are:the conversion gain (GC) is 5.3 dB,the input-referred third-order intercept point (PIIP3) is 4.6 dBm,the input-referred 1 dB compression point (P1dB) is -7.4 dBm,and the single-sideband noise figure (NFSSB) is 21.7 dB.
出处 《Journal of Central South University》 SCIE EI CAS 2011年第5期1572-1578,共7页 中南大学学报(英文版)
基金 Project(61166004) supported by the National Natural Science Foundation of China Project(09ZCGHHZ00200) supported by the International Scientific and Technological Cooperation Program of Science and Technology Plan of Tianjin,China Project(UF10028Y)supported by the Doctoral Scientific Research Foundation for Guilin University of Electronic Technology,China
关键词 CMOS active mixer voltage control load technique low voltage CMOS混频器 负载阻抗 电压控制 低电压 技术 CMOS工艺 信号控制 噪声系数
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