摘要
InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure with dip- aped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on Lmerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed ainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells （MQWs）.
InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure with dip- aped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on Lmerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed ainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells （MQWs）.
基金
supported by the National Natural Science Foundation of China (Grant No. 50602018)
the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002)
the Scienceand Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191)
