射频磁控溅射功率对氧化钒薄膜相变特性的影响

Effects of Sputtering Power on Phase Transition of Vanadium Oxide Thin Film by Radio Frequency Magnetron Sputtering

采用射频磁控溅射方法,结合氮气氛退火处理工艺制备二氧化钒薄膜,研究溅射功率对氧化钒薄膜电阻温度性能的影响.利用X射线衍射仪和X射线光电子能谱仪对薄膜的结晶结构和成分进行了分析,利用四探针测试仪测试了样品的电阻温度特性.实验结果表明,在保持优化氧分压和热处理工艺条件不变的情况下,氧化钒薄膜的方块电阻随溅射功率的升高逐渐下降;经450,℃热处理后,氧化钒薄膜出现了明显的半导体-金属相变特性,相变的幅度随溅射功率的增加而逐渐下降;在溅射功率为150,W时,获得了相变幅度接近3个数量级的高性能二氧化钒薄膜.

Vanadium dioxide thin films were fabricated by RF magnetron sputtering and annealing in nitrogen. The effects of sputtering power on resistance-temperature property were investigated. X-ray diffraction （XRD） and X-ray photoelectron spectroscopy（XPS） were employed to study and analyze the structure of crystalline units and the phase composition of the thin films. The resistance-temperature property was also measured by using of four point probe technology. The results show that the sheet-resistance of vanadium oxide thin films decreased as the sputtering power increased if the oxygen partial pressure and annealing technology kept constant; after annealing at 450 ℃, the vanadium oxide thin film showed obvious semiconductor-metal phase transition, and the order of magnitude of phase transition decreased as the sputtering power increased; the magnitude of phase transition was close to 3 when the sputtering power was 150 W.