摘要
简要介绍了垂直双扩散功率场效应晶体管(VDMOS)的研究现状和发展历史。针对功率VDMOS器件击穿电压和导通电阻之间存在的矛盾,重点介绍了几种新型器件结构(包括沟槽栅VDMOS、超结VDMOS、半超结VDMOS)的工作原理和结构特点,以及其在制造工艺中存在的问题。对不同器件结构的优缺点进行了比较分析。对一些新型衍生结构(包括侧面多晶硅栅VDMOS、边氧沟道VDMOS和浮岛VDMOS)的特点进行了分析,叙述了新型SiC材料在VD-MOS器件中应用的最新进展,并指出了存在的问题和未来发展趋势。
The research status and the development history of the vertical-double-diffusion power MOSFET （VDMOS） are introduced briefly. The working principle and structure characteristic of several new devices （including trench VDMOS, super junction VDMOS, semi-superjunction VDMOS）, as well as problems in manufacturing process which is in the light of contradiction between the breakdown voltage and the conduction resistance of power VDMOS devices are intro- duced. The advantages and disadvantages of different device structures are compared and analyzed. The characteristics of the new derivatives structures （including poly flanked VDMOS, oxide-bypassed VDMOS and floating islands VDMOS） are analyzed. The newest application progress of the new SiC materials on the VDMOS devices is shown, and the existing problems and development tendency in the future are presented.
出处
《微纳电子技术》
CAS
北大核心
2011年第10期623-629,673,共8页
Micronanoelectronic Technology
基金
贵州省科学技术基金(黔科合J字[2008]-2213
[2010]-2134)
贵州省优秀青年科技人才(黔科合人字[2009]-15)
贵州省高层次人才基金(TZJF-2008-31)
贵州大学自然科学青年科研基金项目([2009]-017)
