单晶硅位错纳观应变场的极值点定位分析

Peak Finding Analysis of Nanoscale Strain Field of a Dislocation in Silicon

本文采用了具有次纳米精度的纳观应变场测量方法——极值点定位,在纳米尺度测定了单晶硅位错应变场,给出了位错芯周围数纳米区域的εxx、εyy、εxy全场应变分布图。位错芯周围是应变集中区域,位错芯前方是拉应变,位错芯后方是压应变。将应变测量结果与Peierls-Nabarro位错模型进行了对比,结果证实Peierls-Nabarro位错模型能够在纳米尺度准确描述单晶硅位错的应变场。

In this paper,a nanoscale strain measurement method——Peak Finding,which measurement sensitivity can be reached to sub-nanometer scale,was used to measure the strain field of a dislocation in silicon.The strain components εxx、εyy、εxy were mapped within several nanometers around the dislocation core.There is a convergence region of strain around the edge dislocation core.The strain is expanding in the front of the dislocation,and the lattice is compressive on the other side.The strain measurement results were compared with the Peierls-Nabarro dislocation model.The comparison shows that the Peierls-Nabarro model is an appropriate theoretical model to describe the strain fields of dislocation in silicon at the nanoscale.