酸掺杂聚苯胺修饰酞菁铜有机半导体气敏材料的制备及表征

The Preparation and Characterization of Organic Semiconductor Gas Sensing Material of PANI-CuPc with Acid

本文以4-硝基邻苯二腈和对甲基苯酚为苯环源物质合成酞菁铜(CuPc),以苯胺为聚苯胺(PANT)源物质,并通过掺杂高氯酸(硫酸或硝酸)与CuPc聚合形成一种新的有机半导体材料酸掺杂聚苯胺修饰酞菁铜(CuPcxPANI1-x)。通过质谱、红外光谱、紫外可见光谱、差热失重等手段表征,结果表明:酞菁分子碎片分子量经质谱分析确定为234;由紫外可见光谱分析可知,酸掺杂聚苯胺比本征态的紫外吸收峰向可见光区漂移了40nm;红外图谱可以证明本研究得到的产物是目标产物;热失重分析可知,合成的新物质采用蒸发镀膜工艺形成薄膜是可行的。

CuPc as the production of 4-nitrophthalonitrile and p-cresol was polymerised with aniline to synthesize a new organic semiconductor material CuPcxPANI1-x,by doping perchloric acid、sulfuric acid and nitric acid.The compound substance was then analyzed by the means of mass spectrometry,UV spectrophotometry.Fourier infrared spectroscopy and thermogravimetric analysis.The results indicated that the molecular weight value of phthalocyanine fragments was 234.The UV spectrophotometry absorption peak of PANI was shifted 40 nm to visible region after acid doping.Fourier infrared spectroscopy confirmed that the obtained material was just the target product.It also can be demonstrated from thermogravimetric analysis that using the new substance to form thin film with the process of evaporation coating was available.