氧气气氛下退火温度对BST薄膜结构及物理性能的影响

Influence of Annealing Temperature Under Oxygen Atmosphere on Structure and Physical Properties of the Thin Films for BST

利用溶胶凝胶法在Pt/TiO2/SiO2/Si(001)衬底上制备了(～70nm)的Ba0.6Sr0.4TiO3(BST)薄膜,采用磁控溅射法构建了Pt/BST/Pt/TiO2/SiO2/Si(001)电容器,研究了在氧气气氛中不同退火温度对BST薄膜结构及物理性能的影响.结果发现,650℃退火样品具有良好的结晶质量和介电性能.650℃退火样品在电场强度为200kV/cm时漏电流密度为3.06×10-6 A/cm2.

Ba0.6Sr0.4TiO3（BST） thin films,70 nm thick,were deposited on Pt/Ti/SiO2/Si（001） substrates by sol-gel method,and Pt/BST/Pt/TiO2/SiO2/Si（001） capacitors were fabricated using magnetron sputtering technique.The influence of annealing temperature in flowing oxygen on the microstructure and physical properties of BST thin films were investigated.It is found that BST films have better crystalline quality and physical properties after annealed at 650 ℃,and the leakage current density of Pt/BST/Pt/TiO2/SiO2/Si（001） capacitors is 3.06×10-6 A/cm2 at 200 kV/cm.