摘要
Orthorhombic HoMnO 3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO 3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions.X-ray diffraction and atomic force microscopy were then used to characterize the films.The temperature dependent current-voltage measurement displayed diode-like rectifying behavior,and the forward current was perfectly fitted using the thermionic emission model.The ideality factor and built-in potential were suggested.
Orthorhombic HoMnO3 films with a-axis orientations were prepared epitaxially on Nb-1.0wt%-doped SrTiO3 single crystal substrates by using the pulsed laser deposition technique to fabricate all-oxide heterojunctions. X-ray diffraction and atomic force microscopy were then used to characterize the films. The temperature dependent current-voltage measurement displayed diode-like rectifying behavior, and the forward current was perfectly fitted using the thermionic emission model. The ideality factor and built-in potential were suggested.
基金
supported by the National Natural Science Foundation of China (Grant No. 10704065)
Shandong Excellent Young Scientist Science Foundation (Grant No. 2006BS01235)
the Natural Science Funds of Shandong Province for Distinguished Young Scholar (Grant No. JQ200802)
