期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

薄膜生长工艺对TiO_2基紫外探测器光电性能的影响 被引量：5

Effect of Growth Technology of TiO_2 Film on Photoelectronic Properties of TiO_2 UV Detector
下载PDF
导出
摘要 分别采用磁控溅射和溶胶-凝胶工艺制备了相同厚度的TiO2薄膜,并用以制备了金属-半导体-金属(MSM)结构TiO2基紫外探测器。通过紫外光电性能测试、扫描电子显微镜(SEM)观察及X射线衍射(XRD)分析,研究了TiO2薄膜生长工艺对探测器光电性能的影响规律。结果表明:磁控溅射工艺下,探测器的光电流虽然较低,但响应时间和暗电流远小于溶胶-凝胶工艺制备的探测器,其具备了高辐射灵敏度和快速响应特性。磁控溅射工艺制备的TiO2薄膜结构较为致密,晶界和缺陷较少,方阻较高,这是其取得优良的光电特性的原因。 Different TiO2 films with the same thickness were prepared by RF magnetron sputtering and Sol-Gel respectively.Then,MSM-type TiO2 UV detectors were made with the TiO2 films.The effect of growth technology of TiO2 film on photoelectronic properties was investigated through SEM,XRD,and the detection of photoelectronic properties.It was found that those UV detectors with TiO2 layer prepared by magnetron sputtering had high sensitivity and fast time responses.In this case,the TiO2 that film possesses high quality and high sheet resistance is considered as the film with the excellent photoelectronic properties for TiO2 UV detector.
作者 祁洪飞 刘大博
机构地区 北京航空材料研究院
出处 《航空材料学报》 EI CAS CSCD 北大核心 2011年第5期47-50,共4页 Journal of Aeronautical Materials
关键词 溶胶-凝胶 磁控溅射 TIO2薄膜 紫外探测器 光电性能 Sol-Gel magnetron sputtering TiO2 film UV detector photoelectronic property
分类号 TN36 [电子电信—物理电子学]
  • 相关文献

参考文献12

  • 1PERIALE L, PESKOV V, BRAEM A, et al. Development of new sealed UV sensitive gaseous detectors and their appli- cations [ J]. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2007, 572( 1 ) : 89 - 192.
  • 2MUNOZ E, MONROY E, CALLE F, et al. AlGaN-based UV detectors and applications [ C]. Lasers and Electro-Optics So- ciety 1999 12th Annual Meeting, 1999, 1 ( 1 ) : 96 - 97.
  • 3郝瑞亭,刘焕林.紫外探测器及其研究进展[J].光电子技术,2004,24(2):129-133. 被引量：9
  • 4RAZEGHI M, ROGALSKI A. Semiconductor ultraviolet de- tectors [J]. J Appl Phys, 1996, 79 (10) : 7433 -7473.
  • 5PALACIOS T, MONROY E, CALLE F, et al. High-respons- ivity submicron metal-semiconductor-metal ultraviolet detectors [J]. Appl Phys Lett, 2002, 81(10): 1902-1904.
  • 6SCIUTO A, ROCCAFORTE F, FRANCO S D, et al. Pho- tocurrent gain in 4H-SiC interdigit schottky UV detectors with a thermally grown oxide layer [ J]. Appl Phys Lett, 2007, 90(22): 223507(3).
  • 7BERA A, BASAK D. Carrier relaxation through two-elec- tron process during photoconduction in highly UV sensitive quasi-one-dimensional ZnO nanowires [ J ]. Appl Phys Lett, 2008, 93(5): 053102(3).
  • 8LEE Y C, HASSAN Z, YAM F K, et al. A comparative study of the electrical characteristics of metal-semiconduc- tor-metal (MSM) photodiodes based on GaN grown on sili- con [ J]. Applied Surface Science, 2005, 249 ( 1 - 4) : 91 - 96.
  • 9SHANG D M, CHING W Y. Electronic and optical proper- ties of three phase of titanium diopxide: Rutile, analase, and brookite [J]. Physics Review B, 1995, 51 (19): 13023 - 13031.
  • 10甘勇,刘彩霞,张爽,薛海林,董玮,张歆东,邹博,吴凤清,徐宝琨,陈维友.TiO_2薄膜紫外探测器的光电特性[J].Journal of Semiconductors,2005,26(4):795-797. 被引量：6

二级参考文献33

  • 1邹博,吴凤清,阮圣平,邹乐辉,刘彩霞,甘勇,徐宝琨.纳米TiO_2薄膜的制备及其紫外光吸收性能的研究[J].功能材料,2004,35(5):618-620. 被引量：13
  • 2付姚,曹望和,夏天,周立新,田莹.TiO_2纳米粒子热处理过程相变原因研究[J].功能材料,2005,36(2):250-251. 被引量：8
  • 3姚红军,汪荣昌,戎瑞芬,徐飞,金海岩.TiO_2薄膜氧敏特性研究[J].半导体技术,1997,13(1):50-53. 被引量：6
  • 4Flannery L B, Harrison I, Lacklison D E, et al. Fabrication and characterization of p-type GaN metal-semiconductormetal ultraviolet photoconductors grown by MBE[J]. Materials Science and Engineering, 1997, B50: 307.
  • 5Pau J L, Monroy E, Munoz E, et al. AlGaN photodetectors grown on Si(111) by molecular beam epitaxy[J]. Journal of Crystal Growth, 2001,230 : 544.
  • 6Teke A, Dogan S, Yun F, et al. GaN/AlGaN back illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors[J]. Solid State Electronics, 2003,47: 1 401.
  • 7Fabricius H, Skettrup T, Bisgaard P. Ultraviolet detectors in thin sputtered ZnO films [J]. Appl. Optics, 1986, 25:2 764.
  • 8Liu Y, Gorla C R, Liang S, et al. Ultraviolet detectors based on epitaxial ZnO film grown by MOCVD[J] J. of Elec, Materials, 2000,29(1) :60.
  • 9Liang S, Sheng H, Liu Y, et al. ZnO Schottky ultraviolet photodetectors[J]. Journal of Crystal Growth, 2001,225:110.
  • 10Jonathan Hiscock, Alan T. Collins. Comparison of diamond and silicon ultraviolet photodetectors[J]. Diamond and Related Materials,1999,8:1 753.

共引文献16

同被引文献49

引证文献5

二级引证文献16

航空材料学报
2011年 第5期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部