SiO_2薄膜致密性的表征

Characterization of Densification for SiO_2 Film

论述了表征SiO2薄膜致密性的三种方法:红外光谱法、折射率法和腐蚀速率法,分析了它们各自的特点。制备了不同衬底和不同工艺的三个热氧化SiO2薄膜样品,利用红外光谱法和折射率法对样品进行了对比测试。结果表明,采用红外光谱法表征SiO2薄膜的致密性时,主特征吸收峰频率不仅与薄膜致密性相关,还与样品的厚度和衬底等因素有关;而折射率法受这些因素的影响较小,是表征SiO2薄膜致密性较为适用的方法。

Three ways to characterize the compactness of SiO2 film,including infrared spectroscopy,refractive index and etch rate methods,were discussed,and their characteristics were analyzed.Three samples with different substrates were prepared with different processes.These samples were measured using infrared spectrometer and spectroscopic ellipsometry.It was found that,with infrared spectroscopy,the main IR peak frequency not only depended on the compactness of SiO2,but also on its thickness and substrate,etc.,while the refractive index method was little affected by these factors,therefore,it is more suitable for characterizing the compactness of SiO2 films.