期刊文献+

带有直流偏置的毫米波单刀双掷开关仿真与设计 被引量:7

Simulation and Design of Millimeter Wave SPDT Switch with DC Bias
下载PDF
导出
摘要 采用阶跃阻抗传输线和扇形微带短截线,实现了单刀双掷开关的直流偏置,使直流支路与毫米波支路之间的隔离度大于30dB,带宽超过25%,在中心频率30GHz附近回波损耗大于40dB。采用这种直流偏置电路和PIN梁式引线二极管,基于LTCC工艺对单刀双掷开关串联结构进行仿真。设计结果表明在28.5~31.5GHz频率范围内,串联开关的插入损耗小于1.5dB,回波损耗大于15dB,隔离度大于20dB。 The stepped impedance transmission lines and microstrip radial stubs are used to realize the DC bias of SPDT,thus the isolation more than 30dB between DC branch and millimeter wave branch can be achieved,the bandwidth can be more than 25% and the return loss can be more than 40dB near the center frequency of 30GHz.The proposed DC bias circuit and planar beam lead PIN diodes of series SPDT switch in terms of low temperature co-fired ceramic(LTCC) technology was designed and measured.The results show that from 28.5 to 31.5GHz the insertion loss of series switch is less than 1.5dB,the return loss is more than 15dB,the isolation is more than 20dB.
出处 《微波学报》 CSCD 北大核心 2011年第5期28-31,共4页 Journal of Microwaves
基金 国家863重点项目(2009AA01Z260) 国家973项目(2010CB731903) 国家科技重大专项(20092X01034-002-001-005)
关键词 毫米波 直流偏置 单刀双掷开关 仿真与设计 millimeter wave DC bias SPDT switch simulation and design
  • 相关文献

参考文献12

  • 1Yamane D. , Yamashita K. , Seita H. , et al.. A dual- SPDT BF-MEMS switch on a small-sized LTCC phase shifter for Ku-band operation [ A ]. APMC 2009 [ C ]. 2009. 555-558.
  • 2Uzunkol M. , Rebeiz G. M.. A Low-Loss 50-70 GHz SP- DT Switch in 90 nm CMOS [ J ], Journal of Solid-State Circuits ,2010,45 (10) :2003-2007.
  • 3Dinc T. , Zihir SI , Gurbuz Y.. CMOS SPDT T/R switch for X-band, on-chip radar applications [ J ]. Electronics Letters ,2010,46 (20) : 1382-1384.
  • 4戴永胜,方大纲,张宇峰,祁高品,朱健,郁原卫.毫米波悬臂梁串联反射型接触式RF-MEMS开关的研究[J].微波学报,2008,24(3):74-77. 被引量:10
  • 5Lin Kunyou, Wang Yujiu, Niu Dowchih, et al. Millime- ter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks [ J ]. Microwave Theory and Techniques. 2003,51 (4) : 1076- 1085.
  • 6Wu Rufei, Yin Junjian, Liu Huidong, Zhang Haiying. An 8 - 20GHz Monolithic SPDT GaAs PIN Diode Switch. Journal of Semiconductors [ J]. 2008,29 (10) : 1864- 1867.
  • 7Atesal Y. A. , Cetinoneri B. , Rebeiz G. M.. Low-loss O. 13-m CMOS 50 - 70GHz SPDT and SP4T switches[ A]. Radio Frequency Integrated Circuits Symposium [ C ]. 2009. IEEE. 43-46.
  • 8Indcr Bahl, Prakash Bhartia. Microwave Solid State Cir- cuit Design[M] ,2nd ed. New York: Wiley,2003. 632- 652.
  • 9Sun P. , Heo D. , Analysis of parasitic effects for pin di- ode SPDT switch [ J ]. Electronics Letters, 2009,45 (10) : 503 -504.
  • 10Lee Wen His, Chert H, Tang C W, et al. High per- formance packaging with multilayer ceramic antenna switch module for wireless communication [ A ]. Elec- trnnic Materials and Packaging [ C ]. Proceedings of the 4th International Symposium on, 2002. 403-408.

二级参考文献12

  • 1孙建海,崔大付,苏波,王海宁.宽带RF-MEMS开关驱动电压的分析研究[J].微纳电子技术,2004,41(9):37-40. 被引量:7
  • 2Rebeiz G M, Muldavin J B. RF MEMs switches and switch circuits [ J ]. IEEE Microwave Magazine, 2001,2 (4) :59 -71
  • 3Muldavin J B, Rebeiz G M. High isolation CPW MEMS shunt switches Part 1 : modeling [ J ]. IEEE Transactions on Microwave Theory Techniques, 2000,48 ( 6 ) : 1045 - 1052
  • 4Goldsmith C L,Yao Z, Eshelman S, et al. Performance of low loss RF MEMS capacitive switches[ J]. IEEE M icrowave and Guided Wave Letters, 1998,8 (8) :269 - 271
  • 5Zahn M. Electromagnetic Field Theory: A Problem Solving Approach [ M ]. New York : John w & SoD. S, Inc, 1979
  • 6Saeid Afrang, Ghader Rezazadeh. Design and Simulation of and Simple Varying section Cantilever and Fixed-Fixed End Types MEMS Switches [ C ]. ICSE Malaysia Proc. , 2004, 593 - 596
  • 7Yao J J, Chang M F. A surface micromachine miniature switch for telecommunications applications with signal frequencies from DC up to 4GHz[ C ]. The 8th International Conference on Solid State Sensor and Actuator, and Eurosensors Ⅸ, Stockholm, 1995:386
  • 8Zavracky P M , Majumder S, Mcgruer N E. Micromechanical switches fabricated using nickel surface micromachining [J]. Microelectromechan Syst,1997,6(1) :3
  • 9Pacheco S, Nguyen C T, Katehl L B. Micromechnical electrostatic K-band switches [ C ]. IEEE MTT-S International microwave symposium, Baltimore Maryland, 1998 : 1569 - 1572
  • 10Chang won Jung, Ming-jer Lee, Li G P, Franco De Flaviis. Reconfigurable Scan-Beam Single-Ann Spiral Antenna Integrated With RF-MEMS Switches[J]. IEEE Transactions on antennas and propagation. 2006, 54 (2) : 455 - 463

共引文献9

同被引文献20

  • 1熊锦康,张霄鹏,刘为勇,徐姗姗,汪杰,黄勇.基于LTCC的北斗接收机开关电路小型化设计[J].微波学报,2012,28(S2):262-265. 被引量:1
  • 2顾颖言.PIN管控制电路功率容量的确定[J].现代雷达,2005,27(3):60-64. 被引量:16
  • 3弋稳.雷达接收机技术[M]{H}北京:电子工业出版社,2005113-116.
  • 4高保薪.微波集成电路[M]{H}北京:国防工业出版社,2005374-385.
  • 5于洋.微波宽带PIN开关研究[D]{H}成都:电子科技大学,2005.
  • 6雷闻章,詹铭周,徐锐敏.毫米波单刀双掷开关[A].年全国微波毫米波会议论文集(上册).2011
  • 7卢茨.功率半导体器件--原理、特性和可靠性[M].第二版.北京:机械工业出版社,2013.65-99.
  • 8White J F. Microwave semiconductor engineering [ M]. New York: Van Nostrand Princeton, 1982. 122-167.
  • 9Watson H A. Microwave semiconductor devices and their circuit application [ M ]. New York : McGraw-Hill Book Co, 1969. 263-308.
  • 10Steimhagen F, Massler H, Haydl W H, et al. Coplanar W-band SPDT and SPTF resonated PIN diode switches [ A ]. 29th European Microwave Conference [ C ], Freiburg: 1999. 53-56.

引证文献7

二级引证文献10

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部