摘要
为了提高无线通信系统的工作效率,提出了一种基于逆F类结构的新型高效率功率放大器。结合功率晶体管的寄生参数,设计了一种添加了寄生补偿电路的输出端谐波控制网络,对2到5次谐波阻抗进行了处理。针对电路中寄生反馈元件的存在,在输入端对2次和3次谐波阻抗也分别进行了开路和短路处理。该功率放大器选用GaN工艺的HEMT器件作为功率晶体管,当工作在940MHz频率时,经测试所获得的最大漏极效率为87.4%,最大功率附加效率为78.6%,饱和输出功率为39.8dBm。
A novel high efficiency inverse class-F power amplifier is designed for improving the efficiency performance of the wireless communication systems.Considering the parasitic elements of the power transistor,a parasitic compensation circuit is added into the harmonic control network at the output node to optimize the 2nd-5th harmonic impedances.The 2nd and 3rd harmonic impedances are also matched to open and short respectively at the input node,due to the existence of parasitic feedback elements.According to the proposed architecture,an inverse class-F power amplifier using GaN HEMT has been designed at 940MHz,and maximum drain efficiency of 87.4%,maximum power-added efficiency of 78.6%,saturated output power of 39.8dBm are measured respectively.
出处
《微波学报》
CSCD
北大核心
2011年第5期50-54,共5页
Journal of Microwaves
基金
新一代宽带无线移动通信网科技重大专项(2010ZX03007-003-01)
华为高校科技基金
关键词
逆F类
高效率
寄生补偿
功率放大器
inverse class-F
high efficiency
parasitic compensation
power amplifier
