磁控溅射法制备氧化铜纳米线阵列薄膜及其气敏性质

Synthesis and gas-sensing properties of CuO nanowires array film by magnetron sputtering method

通过磁控溅射法在掺氟二氧化锡导电玻璃(FTO)衬底上溅射金属铜薄膜,所制备的Cu薄膜在管式炉中退火氧化生长得到CuO纳米线阵列薄膜.用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)对其形貌和结构进行了表征,并研究了这种通过磁控溅射得到的CuO纳米线阵列薄膜对CO和H2S的气敏性质.研究结果表明,CuO纳米线阵列薄膜在250℃时对CO气体具有最强的气敏响应,并且当CO浓度增大时其气敏响应明显增强.而对于H2S气体,在常温下CuO纳米线阵列薄膜能够对低浓度的H2S气体响应,说明这种CuO纳米线阵列薄膜可以在常温、低浓度下探测H2S气体;而当测试温度升高时,其电阻值在H2S气体氛围中迅速减小.我们对这种异常的电阻变化现象进行了解释.

The thin copper films were deposited by magnet sputtering on fluorine-doped tin oxide （FTO） coated glass. The CuO nanowires array film can be obtained through the heat oxidation process. The morphology and microstructure of the copper film and the CuO nanowires film was characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM） and high-resolution transmission electron microscopy （HRTEM）, respectively. The CO and H2S sensing characteristics of the CuO nanowires array film were also investigated. The results show that CuO nanowires array film exhibited highest response to CO gas at 250℃. The response was significantly enhanced when the CO gas concentration was increased. There is a sensing response at low gas concentration for H2S at room temperature. While for the higher temperature, the resistance of the CuO nanowires array film decreased rapidly, which is different from the CO gas. The abnormal resistance change for the H2S was also illustrated in this article.