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垂直喷淋式原子层沉积反应器设计及数值模拟 被引量:1

Vertical Showehead Atom Layer Depositon Reactor Design and Simulation
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摘要 提出垂直喷淋式原子层沉积(vertical showehead atom layer depositon reactor,VS-ALDR)反应器的概念。依据原子层沉积的基本原理,对VS-ALDR进行了四种形式的进口设计方案,分别为(1)无间隙扇形分隔进口设计;(2)带中心孔的无间隙扇形分隔进口设计;(3)间隙扇形分隔进口设计;(4)带中心孔的间隙扇形分隔进口设计。在fluent软件中对上述4种设计方案进行流场、温场以及浓度场模拟。根据模拟结果并应用传质理论,对VS-ALDR反应器中反应物浓度的分布进行分析和讨论。分析结果表明中心孔对于TMG和NH3的分隔作用明显。间隙扇形进口有利于TMG和NH3的分隔,并使得衬底处MO源和NH3的浓度集中在喷口下方,与分隔气体的互扩散减少。针对带中心孔的间隙扇形分隔进口反应器,讨论了不同的进口设计方案、高度、分隔气体扇形角、压强、衬底转速、流速以及不同的分隔气体对衬底处浓度分隔效果的影响。该研究结果适用于VS-ALDR输运过程及生长参数确定。为原子层沉积反应器的改进设计提供参考。 The vertical showehead atom layer depositon reactor(VS-ALDR) reactor is introduced.Based on the basic principles of atomic layer deposition,four forms of VS-ALDR is designed.Respectively(1) No aperture fan-shaped inlet design;(2)No aperture fan-shaped inlet design with center hole;(3)No aperture fan-shaped inlet design;(4) Aperture fan-shaped inlet design with center hole.The simulation of flow field,temperature field and concentration field in the CFD software are performed.According to the simulation results and mass transfer theory,the concentration distribution is discussed on the VS-ALDR.The results show that the center hole had obvious effect for the separation of TMG and NH3.Separating fan-shped inlet design is conducive to sepreate TMG and NH3.It makes the MO source and NH3 concentrate under the inlet region below with the separating gas inter-diffusion reduction.For the aperture fan-shaped inlet with center hole reactor design,the numerical simulation results show that there exists an optimum separated condition for different inlet design,reactor height,seperated angle,chamber pressure,substrate rotation,inlet velocity and different carrier gas.The result is useful for VS-ALDR transport processes,growth parameters determined and the improvement of reactor design.
作者 于海群 左然
出处 《科学技术与工程》 2011年第30期7334-7338,7343,共6页 Science Technology and Engineering
基金 国家自然科学基金(60376006) 江苏省研究生创新计划项目(CX10B_260Z)资助
关键词 垂直喷淋 ALD 扇形进口 vertical showehead ALD fan-shped inlet simulation
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参考文献13

  • 1Theodoropoulos C, Mountziaris T J, Moffat H K, et al. Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase ep- itaxy, Journal of Crystal Growth, 2000 ; 217 ( 1-2 ) : 65 -81.
  • 2Chen C H, Liu H, Steigerwald D, et al. A study of parasitic reac-tions between NH3 and TMG or TMA1, Journal of Electronic Materi- als, 1996;125(6) :1004-1009.
  • 3Lundin W V, Zavarin E E, Sizov D S. Effects of reactor pressure and residence time on GaN MOVPEgrowth efficiency. 1ournal of Crystal Growth ,2006 ;287(2) :605-609.
  • 4Pawlowski R P, Theodoropoulos C, Salinger A G. Fundamental mod- els of the metalorganic vapor-phase epitaxy of gallium nitride and their use in reactor design, Journal of Crystal Growth ,2000;221 (1-4) : 622-628.
  • 5Zhaoa D G, Zhua J J, Jianga D S, Parasitic reaction and its effect on the growth rate of A1N by metalorganic chemical vapor deposition, Journal of Crystal Growth ,2006 ;289 ( 1 ) :72-75.
  • 6Yang C C, Huang C K, Chi G C, et al. Growth and characterization of GaN by atomsphere pressure metalorganic chemical-vapor deposi- tion with a novel separate-flow reactor, Journal of Crystal Growth, 1999;200 (1-2) :39-44.
  • 75(uo Ran, Zhang Hang, Liu Xiang-lin, Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets, Journal of Crystal Growth ,2006 ;293 (2) :498-508.
  • 8Suntola T, Atomic layer epitaxy. Materials Science Reports, 1989 ;4 (7) :261-312.
  • 9Markku L, Mikko R, Atom layer deposition ( ALD ) : from precursors to thin film structure. Thin Solid films ,2002 ;409( 1 ) :138-146.
  • 10Tischer M A, Bedair S M, Improved uniformity of epitaxy indium- based compounds by atom layer epitaxy. Appl Phys Lett, 1986 ;49 (5) :274-276.

二级参考文献32

  • 1左然,张红,刘祥林.径向三重流MOCVD反应器输运过程的数值模拟[J].Journal of Semiconductors,2005,26(5):977-982. 被引量:15
  • 2左然,张红,徐谦.径向流动MOCVD输运过程的数值模拟和反应器优化[J].人工晶体学报,2005,34(6):1011-1017. 被引量:3
  • 3Hitchman M L,Jensen K F,Eds.Chemical Vapor Deposition[M].London:Academic Press,1993.
  • 4Fotiadis D,Kieda S,Jensen K F.Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy:Ⅰ.Effects of Heat Transfer Characteristics,Reactor Geometry and Operating Conditions[J].Journal of Crystal Growth,1990,102:441-470.
  • 5Cho W K,Choi D H.Optimization of a Horizontal MOCVD Reactor for Uniform Epitaxial Layer Growth[J].International Journal of Heat and Mass Transfer,2000,43:1851-1858.
  • 6Weyburne D W,Ahern B S.Design and Operating Considerations for a Water-cooled Close-spaced Reactant Injector in a Production Scale MOCVD Reactor[J].Journal of Crystal Growth,1997,170:77-82.
  • 7Breiland W G,Coltrin M E,Creighton J R,et al.Organometallic Vapor Phase Epitaxy (OMVPE)[J].Materials Science and Engineering,1999,R24:241-274.
  • 8Liu Y,Chen H X,Fu S.CFD Simulation of Flow Patterns in GaN-MOCVD Reactor[J].Chinese Journal of Semiconductors,2004,25(12):1639-1646(in Chinese).
  • 9FLUENT 6.2 User's Guide[M].Fluent Inc.,2005.
  • 10Jensen K F,Einset E O,Fotiadis D L.Flow Phenomena in Chemical Vapor Deposition of Thin Films[J].Annual Review Fluid Mechanics,1991,23:197-232.

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