SnO_2纳米线的制备及其光致发光特性

Preparation and Photoluminescence Properties of SnO_2 Nanowires

采用锡单质直接氧化法在850℃制备了SnO2纳米线,采用X射线衍射仪和X射线能谱仪对SnO2纳米线进行了物相分析,用扫描电子显微镜和透射电子显微镜对其形貌进行了观察,并在荧光光谱仪上研究了其光致发光特性。结果表明:制备的SnO2纳米线具有正方金红石结构,其尺寸均匀一致,长度为数十到数百微米,有的甚至达到数毫米,直径约为100nm;其生长机理由气-固(VS)生长机制控制;室温下,其光致发光谱在395nm(3.14eV)处有一强峰,在310nm(4eV)处有一弱峰,发光主要是由单离子氧空位引起。

The tin was oxidized directly to tin dioxide （SnO2） nanowires at 850℃. The X-ray diffractometer and X-ray energy dispersive spectrometer were used to analysis the phase, scanning electron microscopy and transmission electron microscopy were used to observe the morphology, and the photoluminescence property was studied by fluorescence spectroscopy. The results show that the nanowires prepared by this method were tetragonal futile structure, their sizes were uniform, and the lengths were from tens to several-hundred micrometers, some even reached a few millimeters, their diameters were about 100 nm. The ShOe nanowires growth was controlled by vapor-solid （VS） mechanism. Photoluminescenee spectrum of the SnO2 nanowires showed that there were a strong peak at 395 nm （3. 14 eV） and a weak peak at 310 nm （4 eV） at room temperature, and photoluminescence was attributed to oxygen vacancies.