Annealing effects of Sn-Al and Sn-Cu nano thin films on mechanism of electromagnetic interference shielding

热处理效应对Sn-Al与Sn-Ca纳米薄膜的电磁屏蔽机制(英文)

The sputtered Sn-Al and Sn-Cu thin films were used to investigate the effects of the crystallization mechanism and film thickness on the electromagnetic interference （EMI） characteristics. In addition, the annealed microstructure, electrical conductivities and EMI characteristics of the Sn-xAl films and the Sn-xCu films were compared. The results show that the electromagnetic interference （EMI） shielding of Sn-Al film was increased after annealing. For the Sn-Cu films with higher Cu mole concentration, the low frequency EMI shielding could not be improved. After annealing, the Sn-Cu thin film with lower Cu mole concentration possesses excellent EMI shielding at lower frequencies, but has an inverse tendency at higher frequencies.

利用溅镀Sn-Al纳米薄膜和Sn-Cu纳米薄膜讨论结晶机制与膜厚对电磁波屏蔽特性的影响,比较了Sn-Al和Sn-Cu薄膜的高温显微组织、导电性与电磁波屏蔽性能。结果表明,高温处理提高了Sn-Al纳米薄膜的电磁波屏蔽性。在低频条件下,高Cu摩尔浓度的Sn-Cu纳米薄膜不能有效改善电磁波屏蔽性;高温处理后,低Cu摩浓度的Sn-Cu纳米薄膜能提高低频的电磁波屏蔽性,而高频下的电磁波屏蔽性则呈相反趋势。