大功率垂直腔面发射激光器列阵的串接结构

High-power vertical cavity surface emitting laser array in series structure

为了在不提高驱动电流的前提下增大垂直腔面发射激光器的输出功率,提出了一种将多个垂直腔面发射激光器芯片串接在一起的结构。首先,将垂直腔面发射激光器芯片焊接在氮化铝陶瓷热沉上,接着用金丝引线的方法以串联方式将芯片连接在一起。分别测试了串接4个、2个和单个芯片器件的微秒脉冲输出功率和纳秒脉冲输出功率,其分别为775,416,217mW和18.9,9.8,5W,测试结果显示串接4个和2个芯片器件的输出功率分别约为单个芯片输出功率的4倍和2倍。串接多个芯片器件的发射光谱半高宽(FWHM)比单个器件的略宽,但是可以通过选择均一性良好的芯片来解决这一问题。实验显示,串接结构可以实现在不提高驱动电流的条件下大幅度提高输出功率。

For increasing the output powers without improving drive currents to high power Vertical Cavity Surface Emitting Lasers（VCSELs）,a VCSEL in series structure was presented.First,the VCSEL chips were soldered on a AlN ceramic heat sink,then the chips were connected by a wire bonding in series.The output powers of four-chip devices in series,two-chip devices in series and a single device were measured under microsecond and nanosecond pulses,which are 775,416,217 mW and 18.9,9.8,5 W,respectively.Test results show that the output powers of the first two kinds of devices in series are about 4 times and twice that of the single device.Moreover,the Full Width at Half Maximum（FWHM） of multiple-chip devices in series is slightly wider than that of the single device,which can be improved by choosing good uniformity cascade chips.In conclusion,the VCSEL in series structure can increase the output power without improving the drive current.