Cu上石墨烯的化学气相沉积法生长研究

Graphene Synthesis on Cu by Chemical Vapor Deposition

利用自行搭建的化学气相沉积(CVD)设备在Cu箔衬底上成功的制备出石墨烯薄膜,并利用光学显微镜和拉曼光谱分析等手段对石墨烯薄膜的形貌和结构进行了表征。主要研究了Cu箔的表面处理和沉积过程的气体流量对石墨烯质量的影响,发现氨水处理Cu箔可以腐蚀Cu箔表面的各种杂质提高Cu箔的洁净度从而提高石墨烯的结晶质量,优化CH4和H2的气体流量可以提高石墨烯的单层性和均匀性。并最终在CH4:H2=200:0 sccm条件下,在氨水处理过的Cu箔上获得了面积1.5 cm×1.5 cm的均匀的单层石墨烯。

Graphene films were successfully synthesised on Cu foils by a home -made chemical vapor deposition （CVD） equipment, and their morphology and structure were characterized by optical microscopy and Raman spectroscopy. The influences of Cu foils surface treatment and gas flow rates on quality of graphene films were studied. The results show that the ammonia treatment can remove a variety of impurities so as to clean the Cu foils and to improve the crystal quality of graphene, optimizing the CH4 and H2 gas flow rate leads to flewer - layer, more homogeneous graphene films. Finally, we obtained homogeneous single - layer graphene films over 1.5cm×1.5cm area under the condition of CH4 ： H2 = 200 ： 0 sccm on Cu foils.