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各向异性磁电阻材料的研究进展 被引量:8

Research Progress on Anisotropic Magnetoresistance
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摘要 各向异性磁电阻效应是自旋电子学中的一种非常重要的物理现象,其在诸多相关领域有着广泛的应用前景,因而也是材料科学研究中最具吸引力的方向之一。分别介绍了传统坡莫合金各向异性磁电阻、隧穿各向异性磁电阻、弹道各向异性磁电阻、库仑阻塞各向异性磁电阻、异常各向异性磁电阻以及反铁磁隧穿各向异性磁电阻的研究进展,提出了一些研究中面临的挑战并对发展方向作出展望。 Anisotropie magnetoresistance (AMR) effect is an important physical phenomenon, as provide a wide per- spective in many relevant fields as well as has been one of the most attractive research directions in material science. In this paper, we have summarized the recent advances in AMR including conventional permalloy AMR, tunnel AMR, ballistic AMR, coulomb blockade AMR, anomalous AMR, and antiferromagnet AMR. The facing problems as well as the chal- lenges have also been briefly discussed. Moreover, development tendencies were prospected.
出处 《中国材料进展》 CAS CSCD 2011年第10期14-21,48,共8页 Materials China
基金 国家自然科学基金(51071023) 北京市属高等学校人才强教计划资助项目(PHR2010071 22)
关键词 各向异性磁电阻 自旋轨道耦合 自旋电子学 anisotropic magnetoresistance spin-orbit coupling spintronics
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  • 1蒋致诚.硬盘驱动器巨磁电阻(GMR)磁头:从微米到纳米[J].物理,2004,33(7):529-533. 被引量:6
  • 2LI Haifeng,MA Jidong,YU Guanghua,LONG Shibin,ZHAO Hongchen,ZHU Fengwu.Investigation on high magnetoresistance Ni_(0.81)Fe_(0.19) films grown on (Ni_(0.81)Fe_(0.19))_(1-x)Cr_(x) underlayers[J].Chinese Science Bulletin,2003,48(11):1087-1089. 被引量:1
  • 3蔡建旺,赵见高,詹文山,沈保根.磁电子学中的若干问题[J].物理学进展,1997,17(2):119-149. 被引量:49
  • 4Fitzsimmons M R, Silva T J, Crawford T M. Surface oxidation of permalloy thin films [ J ]. Phys. Rev. B, 2006, 73 ( 1 ) : 014420.
  • 5YuGH, ZhaoHC, LiMH, ZhuFW, LaiWY. Interfacereaction of Ta/Ni81 Fe19 or Ni81 Fe19/Ta and its suppression [ J]. Appl. Phys. Lett. , 2002 , 80(3) : 455.
  • 6Li K B, Wu Y H, Han G C, Qiu J J, Zheng Y K, Guo Z B, An L H, Luo P. Electrical and magnetic properties of nano-oxide added spin valves [J]. Thin Solid Film, 2006 , 505(1 -2) : 22
  • 7Fukuzawa H, Yuasa H, Hashimoto S, Iwasaki H, Tanaka Y. Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films [J] . Appl . Phys. Lett. , 2005, 87(8) : 082507.
  • 8Veloso A, Freitas P P, Wei P, Barradas N P, Soares J C, Almeida B, Sousa J B. Magnetoresistance enhancement in specular, bottom-pinned, Mn83 Ir17 spin valves with nano-oxide layers [ J ] . Appl. Phys. Lett. , 2000, 77(7) :1020.
  • 9Hong J, Lee Y, Lee M K, Song H J, Shin H J, Yoo Y, Suh J. Chemical states of Co and Fe in a specularly reflective oxide layer in spin valves [ J]. Appl. Phys. Lett., 2003, 83 (23) : 4803.
  • 10Lin T, Mauri D. Effects of oxide seed and cap layers on mag-netic properties of a synthetic spin valve [ J ]. Appl. Phys. Lett. , 2001, 78(15) : 2181.

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