半导体纳晶能级结构与电子性质的电化学研究

Electrochemical Investigation of the Bandgap Structures and Electronic Properties of Semiconductor Nanocrystals

了解半导体纳晶能级结构特征和电子特性是其在光电子器件中应用的基础,电化学循环伏安技术提供了一种获取上述关键信息的有效途径。本文系统介绍了利用循环伏安技术探测纳晶能级结构与电子性质的原理、方法以及局限;在此基础上,着重从纳晶能级结构与电子性质的影响因素及规律、纳晶电荷输运性质、纳晶电化学反应机理等方面,综述了该方向近年来取得的研究进展;最后指出了目前研究中存在的问题,并预测了今后的发展方向。

The widespread application of semiconductor nanocrystals（SNCs） in optoelectronic devices urgently demands an exact knowledge regarding their band structures and electronic properties.Cyclic voltammetry（CV） technique has been proven to be a simple and effective approach to acquire above key information.In this paper,we firstly elaborate the mechanism,method and limitation of employing CV technique to examine SNCs.Then,we systemically review recent progress in electrochemical characterization of SNCs from following three aspects： the factors that influence the band structures and electronic properties of SNCs,the charge transport properties of SNCs,and electrochemical redox reaction mechanism of SNCs.Finally,we point out the technical and theoretical challenges existing in current research,and predict the promising solutions to such issues.