气流控制的碳纳米管的定向生长研究

The Orientated Growth Study of Carbon Nanotubes Controlled by Gas Flow

通过严格控制气流的方向和催化剂颗粒的密度,加以利用材料自身的重力作用,用热化学气相沉积(T-CVD)的方法在硅衬底上制备了长度可控且与衬底平行的碳纳米管(CNTs)。并研究了催化剂的厚度,生长时间和重力等因素对碳纳米管定向生长的影响。利用扫描电镜对制备的碳纳米管进行了表征。

We synthesized the carbon nanotubes （CNTs）on silicon substrates using thermal chemical vapor deposition （T- CVD） method by controlling the gas flow direetion and the density of catalyst particles and using the gravity of these materials. The synthesized CNTs were length controlled and paralleled with the silicon substrates. The effects of growth factors such as the thickness of the catalyst, the growth time and the gravity on the orientated growth of CNTs were studied. The surface morphology of synthesized CNTs was characterized by scanning electron microscopy （SEM）.