摘要
Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
Intrinsic zinc oxide films, normally deposited by radio frequency （RF） sputtering, are fabricated by direct current （DC） sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu （ln, Ga） Se2 （CIGS） solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
基金
supported by the National "973" Program of China(Nos.2007CB936704 and 2009CB939903)
the Natural Science Foundation of Shanghai,China(No.11ZR1441900)
the Science and Technology Commission of Shanghai,China(Nos.10520706700 and 0952nm06500)
