期刊文献+

A 200 mA CMOS low-dropout regulator with double frequency compensation techniques for SoC applications

A 200 mA CMOS low-dropout regulator with double frequency compensation techniques for SoC applications
原文传递
导出
摘要 This paper presents a 200 mA low-dropout (LDO) linear regulator using two modified techniques for frequency compensation. One technique is that the error amplifier uses a common source stage with variable load, which is controlled by the output current, is served as the second stage for a stable frequency response. The other technique is that the LDO uses a pole-zero tracking compensation technique at the error amplifier to achieve a good frequency response. The proposed circuit was fabricated and tested in HJTC 0.18 μm CMOS technology. The designed LDO linear regulator works under the input voltage of 2.8-5 V and provides up to 200 mA load current for an output voltage of 1.8 V. The total error of the output voltage due to line and load variation is less than 0.015%. The LDO die area is 630 x 550 μm^2 and the quiescent current is 130 μA. This paper presents a 200 mA low-dropout (LDO) linear regulator using two modified techniques for frequency compensation. One technique is that the error amplifier uses a common source stage with variable load, which is controlled by the output current, is served as the second stage for a stable frequency response. The other technique is that the LDO uses a pole-zero tracking compensation technique at the error amplifier to achieve a good frequency response. The proposed circuit was fabricated and tested in HJTC 0.18 μm CMOS technology. The designed LDO linear regulator works under the input voltage of 2.8-5 V and provides up to 200 mA load current for an output voltage of 1.8 V. The total error of the output voltage due to line and load variation is less than 0.015%. The LDO die area is 630 x 550 μm^2 and the quiescent current is 130 μA.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期117-121,共5页 半导体学报(英文版)
关键词 linear regulator low-dropout regulator load transient response linear regulator low-dropout regulator load transient response
  • 相关文献

参考文献11

  • 1Falin J. ESR, stability, and the LDO regulator. Texas Instruments Application Report, May 2006, SLVA115.
  • 2Rogers E. Stability analysis of low-dropout linear regulators with a PMOS pass element. Texas Instruments Analog Applications Journal, Aug 1999.
  • 3Rincon-Mora G A, Allen P E. Optimized frequency-shaping cir- cuit topology for LDO's. IEEE Trans Circuits Syst II, 1998, 45(6): 703.
  • 4Chava C K, Martinez J S. A frequency compensation scheme for LDO voltage regulators. IEEE Trans Circuits Syst I, 2004, 51 (6): 1041.
  • 5A1-Shyoukh M, Lee H, Perez R. A transient-enhanced low- quiescent current low-dropout regulator with buffer impedance attenuation. IEEE J Solid-State Circuits, 2007, 42(8): 1732.
  • 6Lin Y T, Wu C C, Jen M C, et al. A low dropout regulat0r using current buffer compensation technique. ICSICT, 2010:144.
  • 7Lin H C, Wu H H, Chang T Y. An active-frequency compen- sation scheme for CMOS low-dropout regulators with transient- response improvement. IEEE Trans Circuits Syst II, 2008, 55(9): 853.
  • 8Rincon-Mora G A, Allen P E. A low-voltage, low-quiescent cur- rent, low-dropout regulator. IEEE J Solid-State Circuits, 1998, 33(1): 36.
  • 9Yamazaki A, Yamada K, Sugahara S. A frequency compensation technique for variable output low dropout regulators. APCCAS, 2006:1595.
  • 10Zhan C C, Wang W, Zhou X F, et al. A new bandgap reference for high-resolution data converters. ICIT, 2007:488.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部