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溶胶-凝胶法制备V_2O_5微晶及其合成活化能研究

Preparation and Synthesized Activation Energy of V_2O_5 Microcrystallites Synthesized by Sol-gel Method
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摘要 以NH4VO3和CO(NH2)2等为起始原料,采用溶胶-凝胶法制备了V2O5微晶。研究了煅烧温度对产物物相和显微结构的影响,以及反应的合成活化能。采用X射线衍射、扫描电镜等手段对产物进行了表征。结果表明,后处理温度为500℃可得到V2O5微晶,当反应温度超过600℃时,V2O5微晶表现出(001)晶面的取向生长特征。通过差热分析,计算得到其合成活化能为95.81 kJ/mol。 V2O5 microcrystalline was prepared by sol-gel method using NH4VO3 and CO(NH2)2 as raw materials.The influence of the calcining temperatures on the phases and microstructures of V2O5 and the synthesized activation energy were particularly investigated.V2O5 microcrystallites were characterized by X-ray diffraction(XRD) and scanning electron microscopy(SEM).The results showed that V2O5 microcrystallites could be obtained at 500 ℃ heat treatment.The as-prepared V2O5 has(001) orientation when the calcining temperature is over 600 ℃.By DTA analysis,the synthesized activation energy is 95.81 kJ/mol.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第5期1242-1245,共4页 Journal of Synthetic Crystals
基金 国家自然科学基金(50942047) 陕西省自然科学基金(2010JM6001) 陕西科技大学研究生创新基金资助项目
关键词 V2O5微晶 溶胶-凝胶法 合成活化能 V2O5 microcrystallites sol-gel method synthesized activation energy
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  • 1夏长生,吴广明,张志华,沈军,周斌,倪星元.溶胶-凝胶V_2O_5薄膜的制备及其电化学特性研究[J].功能材料,2005,36(1):86-89. 被引量:7
  • 2李志栓,吴孙桃,李静,郭东辉.磁控溅射制备五氧化二钒薄膜的研究[J].功能材料,2005,36(2):285-287. 被引量:4
  • 3靳艾平,陈文,朱泉峣.电泳沉积法制备V_2O_5薄膜的结构和性能[J].Chinese Journal of Chemical Physics,2005,18(5):812-816. 被引量:2
  • 4SAYEDE A D, KHELIFA B, PERNISEK M, et al. Lithium intercalation effects on the V2Os (001) surface[J]. Solid State Ionics, 2004, 166 (1- 2): 175 - 181.
  • 5BAN C M, CHERNOVA N A, WHITTINGHAM M S. Electrospun nano-vanadium pentoxide cathode [J]. Electrochemistry Communications, 2009, 11 (3): 522-525.
  • 6NAVONE C, PEREIRRAMOS J P, BADDOUR H R, et al. Electrochemical and structural properties of V2O5 thin films prepared by DC sputtering [J]. Journal of Power Sources, 2005, 146 (1-2): 327-330.
  • 7BAHGAT A A, IBRAHIM F A, ELDESOKY M M. Electrical and optical properties of highly oriented nanocrystalline vanadium pentoxide [J]. Thin Solid Films, 2005, 489 (1 - 2):68 - 73.
  • 8GUERRA E M, SILVA G R, MULATO M. Extended gate field effect transistor using V2O5 xerogel sensing membrane by sol-gel method[J]. Solid State Sciences, 2009, 11 (2): 456 - 460.
  • 9OTTAVIANO L, PENNISIA A, SIMONE F, et al. RF sputtered electrochromic V2O5 films [J]. Optical Materials, 2004, 27 (2): 307-313.
  • 10PAN M, ZHONG H M, WANG S W, et al. Properties of VO2 thin film prepared with precursor VO (acac)2 [J]. Journal of Crystal Growth, 2004, 265 (1 - 2):121 - 126.

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