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射频磁控溅射法制备Zn_(1-x)Mg_xO薄膜及其性能的研究 被引量:1

Preparation and Properties of Zn_(1-x)Mg_xO Thin Films by Radio Frequency Magnetron Sputtering Method
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摘要 本文通过在ZnO靶材上放置高纯Mg片,运用射频磁控溅射法在普通玻璃衬底上制备了Zn1-xMgxO(x=0.1,0.16,0.18,0.24)薄膜。用X射线衍射仪、扫描电镜、紫外-可见-分光光度计等研究了Zn1-x MgxO薄膜的组织结构和性能。结果表明:Zn1-xMgxO薄膜呈ZnO的纤锌矿结构,在ZnO晶格中Mg2+有效地替代了Zn2+。样品表面比较平整,颗粒均匀致密,薄膜质量较高,且在可见光范围内光透过率均为90%左右,具有极好的透光性;此外,随着Mg掺入量的增多,Zn1-xMgxO薄膜的吸收边出现蓝移现象,实现了对禁带宽度的调节。 Zn1-xMgxO(x=0.1,0.16,0.18,0.24) thin films were deposited on common glass substrates by RF magnetron sputtering technology with ZnO target which was placed on high-purity Mg thin pieces.The structure,surface morphology and optical properties of the films were characterized by XRD,SEM and transmittance measurements.It was found that all the Zn1-xMgxO films showed ZnO wurtzite structure,which indicated that the Zn2+ were successfully substituted by Mg2+ in the ZnO lattice.The surface of samples was smooth,and the grains were homogeneous and compact.The average transmittance of all the films for the visible wavelength region was about 90%.As Mg content increasing,the blue shift of absorption edge of Zn1-xMgxO thin films was observed,which meant that Zn1-xMgxO thin film could adjust the band gaps.
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2011年第5期1261-1265,共5页 Journal of Synthetic Crystals
基金 国家自然科学基金(50771037) 高等学校博士学科点专项研究基金(200805620004)资助项目
关键词 射频磁控溅射 Zn1-xMgxO薄膜 禁带宽度 RF magnetron sputtering Zn1-xMgxO thin films band gap
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