耐高温压阻力敏硅芯片及静电键合工艺

High-Temperature Piezoresistive Pressure Sensitive Silicon Chip and Electrostatic Bonding Process

采用微型机械电子系统(MEMS)技术制作出了平膜型硅隔离(SOI)耐高温压阻力敏硅芯片,采用静电键合工艺将该力敏硅芯片封装在硼硅玻璃环上,制作出倒杯式弹性敏感单元.分析了静电键合时力敏硅芯片与玻璃环的对准偏差对力敏硅芯片非线性的影响;实验验证了静电键合工艺对硅芯片温度性能的影响以及制作的耐高温压力传感器的性能.结果表明,对准偏差对硅芯片的非线性有较大影响;静电键合工艺对硅芯片的零位时漂和热零点漂移影响较小;制作的耐高温压力传感器具有优良的性能指标,能满足实际的工程应用需求.

The flat-membrane silicon on insulator （SOI） high-temperature piezoresistive pressure sensitive silicon chip has been developed using MEMS （micro electro-mechanical system） technology. It was packaged on the borosilicate glass ring by electrostatic bonding process, thus the inverted-cup elastic-sensitive unit was produced. The influence of the alignment error between the silicon chip and glass ring on the nonlinearity of the pressure sensitive silicon chip was analyzed. The experiments were performed to verify the effect of the electrostatic bonding process on the temperature properties of the pressure sensitive silicon chip, and obtained the characteristics of the fabricated high-temperature pressure sensor. According to the theoretical and experimental results, the alignment error has a great impact on the nonlinearity of the silicon chip, while the electrostatic bonding process has less effect on the zero drifts and thermal zero drifts of the silicon chip. The fabricated high-temperature pressure sensor has fine performances to meet the requirements of engineering applications.