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氮气对DC-PCVD法制备金刚石薄膜影响的研究 被引量:3

Effect of N_2 gas on the diamond thin films prepared by direct current hot-cathode plasma chemical vapor deposition
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摘要 采用直流热阴极等离子体化学气相沉积方法,用甲烷、氢气、氮气的混合气体在Mo基底上成功制备了金刚石薄膜。分别采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、拉曼光谱仪(Raman)对不同流量氮气氛下生长金刚石薄膜的形貌、取向、质量进行了表征。结果表明:适量氮气的加入,不仅可以促进金刚石薄膜的生长速率,还可以促进金刚石(100)晶面的显现;随着氮气含量的增加,金刚石晶粒也逐渐细化,并且薄膜中非金刚石成分增加,但金刚石表面变得光滑平整。本工作有助于金刚石膜涂层领域的应用。 Diamond films were successfully deposited on Mo substrate by direct current hot-cathode plasma chemical vapor deposition method using CH4/H2/N2 gas mixture.The surface morphology,grain orientation and crystalline quality of diamond films were characterized by scanning electron microscope(SEM),X-ray diffraction(XRD),Raman spectroscopy.The results show that appropriate amount of N2 gas can not only improve the diamond growth rate greatly,but also increase gradually the(100) square diamond grain,with the increase of N2 gas,the crystalline size of diamond decreases companied with part of carbon membrane structure emerging in the film and the surface of diamond film becomes smooth and flat.This study can help to enlarge the application field of diamond film coating.
出处 《金刚石与磨料磨具工程》 CAS 北大核心 2011年第5期15-19,共5页 Diamond & Abrasives Engineering
基金 自然科学基金重大项目(编号:91022029)
关键词 化学气相沉积 金刚石薄膜 氮气 chemical vapor deposition diamond thin films N2 gas
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