柔性PEN衬底ZnO:Ga薄膜的性能研究

Characteristics of ZnO:Ga thin films on flexible PEN substrate with DC magnetron sputtering

以PEN柔性薄膜作为衬底,采用直流对靶磁控溅射的方法,在室温下制备ZnO:Ga薄膜。研究了不同溅射功率和不同溅射压强下制备出的薄膜表现出不同的光学和电学特性。经过溅射压强和溅射功率的优化,获得薄膜厚约900nm、电阻率为7.72×10-4Ω.cm和可见光平均透过率超过75%的PEN衬底ZnO:Ga薄膜。将其应用于PEN透明柔性衬底非晶硅薄膜太阳电池中,得到了转换效率为6.4%的太阳电池。

In this paper, we investigate ZnO thin films on PEN DC magnetron sputtering at room tempurature. At different sputtering power values and pressures, the ZnO thin films exhibit different optical and electrical properties. Optimizing sputtering power and pressure, we find the optimal ZnO film on PEN suhstrate,whose thickness is 900 nm,resistivity is 7.72×10^-4Ω·cm,and average transmittance in the range 400-800 nm is over 75%. We use it as the surface electrode of amorphous silicon thin film solar cells and finally get flexible cells with conversion efficiency of 6.4 %.