n型硅掺Pt 的转型效应及其对制造高互换性热敏电阻的应用

Type Changing Effect of N-Type Si by Pt Doping and Its Application to High Inter-Change able Thermistors Manufacture

根据 Shockley 统计规律,用数值计算方法对深能级杂质 Pt 在 n 型硅晶体中的掺杂转型效应进行了定量描述.得到费米能级(E_F)随掺 Pt 浓度的变化关系及转型后 E_F 的钉扎位置.E_F 钉扎后,材料的电导激活能和电阻率趋于固定值,有利于制作高互换性、高稳定性热敏电阻。从实验上证实了 n 型硅掺 Pt 的转型效应。使掺 Pt 硅单晶热敏电阻 B 值的平均偏差<0.4%,阻值稳定性(100℃老化1000h)(△R)/R<0.15%。

The type changing effect of n-Si by Pt doping was described by calculating the relationship between Fermi level(E_F) and doping density of Pt (N_(pt))according to Schockley's statistics,It was shown that n-Si would change to p-Si and final- ly E_F would pinned with increasing of N_(pt).This character is very useful for ma- nufactureing high inter-change able and high stable thermistors.The calculating results were verified in our experiments. We also show the results of Pt doping n- Sithermisterswith average difference dof- ferenee of B value <0.4%,resista- rice shift (100℃,1000 hour)<0.2%.