摘要
Five different compositions of KxV2O5-nH2O （where prepared by the sol-gel process. Electrical conductiv x=0.00, 0.0017, 0.0049, 0.0064 and 0.0091 mol） were ty and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K. The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content. The conductivity of the present system was primarily determined by hopping carrier mobility. The carrier density was evaluated as well. The conduction was confirmed to obey non-adiabatic small polaron hopping. The thermoelectric power or Seebeck effect, increased with increasing K ions content. The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.
Five different compositions of KxV2O5-nH2O （where prepared by the sol-gel process. Electrical conductiv x=0.00, 0.0017, 0.0049, 0.0064 and 0.0091 mol） were ty and thermoelectric power were measured parallel to the substrate surface in the temperature range of 300-480 K. The electrical conductivity showed that all samples were semiconductors and that conductivity increased with increasing K content. The conductivity of the present system was primarily determined by hopping carrier mobility. The carrier density was evaluated as well. The conduction was confirmed to obey non-adiabatic small polaron hopping. The thermoelectric power or Seebeck effect, increased with increasing K ions content. The results obtained indicated that an n-type semiconducting behavior within the temperature range was investigated.
