摘要
根据IGBT的基本结构和工作原理,建立了一种新的IGBT三维热模型。该模型考虑了Si材料的温度特性,模拟研究了焊料层空洞对器件热稳定性的影响。研究表明焊料层空洞对IGBT器件的热稳定性有很大的影响。实测结果、超声波显微镜以及红外显微镜的扫描图片证实模拟结果。该研究结果对于改进IGBT器件的可靠性有一定意义,值得器件应用工程师、设计及工艺工程师参考。
A novel IGBT 3-D thermal model is implemented according to the basic structure and principle of IGBT.In this model,temperature dependence of the Si layer and die attach voids were taken into account.It is found that die attach void has great influence on the reliability of IGBT applications.The measurement result and pictures of C-SAM and infrared microscope confirm the simulation results.All the results are useful for improving the reliability of IGBT not only for application engineers but also for IGBT designers and process engineers.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2011年第5期517-521,共5页
Research & Progress of SSE
