硅基氧化钆薄膜的生长及结构(英文) 被引量：1

Growth and characterization of Gd_2O_3 thin film on Si

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摘要采用脉冲激光沉积方法(PLD)在不同温度的Si(100)衬底上制备了Gd2O3栅介质薄膜,利用X射线衍射、X射线反射率以及光电子能谱等方法对它的结构、组成以及价带偏移等进行了研究.结果表明:衬底温度为300℃时,Gd2O3薄膜呈非晶态;当衬底温度为650℃时,形成单斜相的Gd2O3薄膜.XPS和XRR结果确定其界面主要是由于界面反应形成的钆硅酸盐.通过XPS分析得到Gd2O3与Si之间的价带偏移为(-2.28±0.1)eV. Gd2O3 thin films were deposited on Si（100） substrates by pulsed laser deposition（PLD）.The structure,composition and band offset were investigated by X-ray diffraction（XRD）,X-ray reflectivity（XRR）,X-ray photoelectron spectroscopy（XPS） and ultraviolet photoemission spectroscopy（UPS）.The results show that,the Gd2O3 thin film is amorphous when growing at 300 ℃ and is crystallized into monoclinic structure at 650 ℃.The formation of Gd-silicate interfacial layer due to interface reaction is confirmed by XRR and XPS.The valence band offset（ΔEV） of（-2.28±0.1）eV is obtained by XPS.

作者李亭亭戚泽明程学瑞张文华张国斌周洪军潘国强

机构地区中国科学技术大学国家同步辐射实验室中国科学技术大学核科学与技术学院中国科学技术大学物理系

出处《中国科学技术大学学报》 CAS CSCD 北大核心 2011年第10期867-871,877,共6页 JUSTC

基金 Supported by National Natural Science Foundation of China(10974191)

关键词 Gd2O3薄膜激光脉冲沉积高介电常数 Gd2O3 thin film pulsed laser deposition high gate dielectric constant

分类号 O484.1 [理学—固体物理]

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