摘要
设计了一种基于阈值电压的基准电压源。利用与温度的平方成正比的电流对具有正负温度系数的电压相加时产生的与温度及工艺有关的特征电流进行了分析,得到了近似等于温度为0 K时MOS管的阈值电压的基准电压值。基于Spectre软件的仿真结果表明,当电源电压为1.7 V时,在20～85℃的温度范围内,该基准电压源的温度系数为5.7 ppm/℃,功耗仅为0.18μW。由此可见,该基准电压源可以广泛应用于非致冷红外焦平面阵列(UIRFPA)的各个电路模块中。
A voltage reference based on threshold voltage is designed. By using a current proportional to the square of the absolute temperature, the pre-exponential factor of the subthreshold current is compensated. Then, a reference voltage which is approximately equal to the threshold voltage of a MOSFET at the absolute temperature of zero degree is obtained. The simulation result based on a Spectre software shows that the voltage reference has a temperature coefficient of 5.7 ppm/℃ and a power consumption of mere 0.18 μW at a supply voltage of 1.7 V in the range from -20 to 85℃. Therefore, it can be widely used in the circuit modules of uncooled infrared focal plane arrays （UIRFPA）.
出处
《红外》
CAS
2011年第11期10-13,共4页
Infrared
基金
国家自然科学基金资助项目(61021061)
关键词
亚阈值
超低功耗
基准电压源
subthreshold
ultra-low dissipation
voltage reference
