最佳缓冲层下微晶硅薄膜pin型太阳电池的数值模拟

NUMERICAL SIMULATION OF SOLAR CELLS BASED ON μc-Si:H THIN FILMS UNDER THE BEST BUFFER LAYERS

运用由美国宾州大学开发的AMPS-1D计算机模拟软件,模拟了在最佳缓冲层和无缓冲层的情况下,太阳电池的各性能参数随本征层厚度的变化、太阳电池的J-V特性和量子效率以及不同晶化率的本征活性层对太阳电池各性能参数和量子效率的影响。模拟结果表明:在最佳缓冲层100nm时,太阳电池的各性能参数比无缓冲层时有所提高;随着本征层晶化率X_c的增大,太阳电池的量子效率QE在长波段有明显提高;本征层晶化率高的太阳电池,具有较高的短路电流J_(SC),低的开路电压V_(OC)、转换效率Eff和填充因子FF。

Not only the performance parameters changing with variation of the thickness of the intrinsic layer, the J-V characteristic and quantum efficiency of solar cells with the best or without buffer layer, but also the different crystallization of the active intrinsic layer influence on the performance parameters and quantum efficiency of solar cells were simulated used the computer program AMPS-1D which was developed at Penn State University in America. The simulated results indicated that the performance parameters become better in the best buffer layer 100nm than no buffer layer; the higher short-circuit current J^c the lower open-circuit voltage Voc, conversion effi- ciency Eff and fill factor FF were obtained for the higher crystallization rate Xc of the intrinsic layer of solar cells, and the quantum efficiency of solar cells in the long wavelengths was also improved.