UPWIND FINITE VOLUME ELEMENT METHODS FOR ONE-DIMENSIONAL SEMICONDUCTOR DEVICE
UPWIND FINITE VOLUME ELEMENT METHODS FOR ONE-DIMENSIONAL SEMICONDUCTOR DEVICE
摘要
一个充分分离的含蓄的 Euler 迎风的有限体积元素方法为一个维的半导体设备被导出并且学习。迎风的计划被介绍在半导体模型处理传送对流主导的散开方程。与为静电的潜力和另外的未知数量的不同时间步骤，方法的计算过程被获得。本地集体能量守恒定律在迎风的有限体积元素计划的框架下面被保存。在 L 2 标准的一阶的精确性被证明。数字实验被给验证方法的实用性和效率。
This work is supported in part-by Shandong Province Natural Science Foundation under Grant No. ZR2010AQ010 and a Project of Shandong Province Higher Educational Science and Technology Program under Grant Nos. JllLA09 and J10LA01.
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