氮化镓晶体刻蚀损伤及其回复方法研究

The study of GaN dry etching-induced damage and its recovery

干法刻蚀中高能量等离子体轰击将不可避免地在氮化镓材料表面引起损伤,这些表面损伤可能会严重影响氮化镓(GaN)材料质量和器件的性能。本文研究了干法刻蚀对GaN晶体表面粗糙度、光学特性和电学性能影响,同时分析了刻蚀损伤的回复方法,并给出了相应机理解释。

High ion energies and plasma flux for GaN dry-etching processing will ineluctably give rise to prominent damages. These surface damages could destroy the properties of the GaN materials and devices. This paper studies the effect of dry-etching on GaN surface, optical property and Hall mobility, respectively. At the same time, methods of recovering damaged GaN are researched, and the relevant mechanism is explained.