基于ICP刻蚀GaN选择比的研究

Research on the Etching Selectivity of GaN

在干法刻蚀GaN时使用AZ-4620作为掩膜层,为了在较快的GaN刻蚀速率下获得良好的GaN/AZ-4620刻蚀选择比,使用电感耦合等离子刻蚀机(ICP),运用Cl2和BCl3作为刻蚀气体,改变气体总流量、直流自偏压、ICP功率、气体组分等工艺条件,并讨论了这些因素对GaN/AZ-4620刻蚀选择比以及对GaN刻蚀速率的影响。实验结果获得了GaN在刻蚀速率为225nm/min时的GaN/AZ-4620选择比为0.92,可以应用于实际生产。

A Cl2/BCl3 inductively-coupled plasma（ICP） was used to etch GaN,using AZ-4620 as the barrier layer,The etching selectivity of GaN/AZ-4620 was improved by changing the total flow rate,DC bias,ICP power,and the ratio of Cl2 was discussed.Experimental results indicate that the selectivity of GaN/AZ-4620 can reach to 0.92 while the etching rate of GaN is 225 nm/min.It fits to the practical production.