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Thermal-dynamical properties and pressure dependence of phonon spectrum of ordered Si_(50)Ge_(50) alloy based on ab initio methods

Thermal-dynamical properties and pressure dependence of phonon spectrum of ordered Si_(50)Ge_(50) alloy based on ab initio methods
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摘要 The phonon spectrum of ordered zincblende Si50Ge50 alloy is calculated by ab initio method. The energy band structure at zero pressure and the pressure dependence of phonon dispersion curves are shown up to 20 GPa. The calculation finds a pressure-induced softening of the transverse acoustic phonon mode and the mode frequency reaching zero at about 14 GPa, which indicate breaking of the symmetry and formation of a new phase under high pressure. The phonon spectrum of ordered zincblende Si50Ge50 alloy is calculated by ab initio method. The energy band structure at zero pressure and the pressure dependence of phonon dispersion curves are shown up to 20 GPa. The calculation finds a pressure-induced softening of the transverse acoustic phonon mode and the mode frequency reaching zero at about 14 GPa, which indicate breaking of the symmetry and formation of a new phase under high pressure.
出处 《Science China(Technological Sciences)》 SCIE EI CAS 2008年第3期244-248,共5页 中国科学(技术科学英文版)
基金 Supported by the National Natural Science Foundation of China (Grant No. 50771090) the State Key Program for Basic Research of China (Grant No. 2005CB724404) the Program for Changjiang Scholars and Innovative Team (Grant No. IRT0650)
关键词 PHONON SPECTRUM Si50Ge50 ALLOY thermal-dynamical properties phonon spectrum, Si50Ge50 alloy, thermal-dynamical properties
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参考文献14

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