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Study on doping effect of interface binding state in the system of PCD and PDC at superhigh pressure

Study on doping effect of interface binding state in the system of PCD and PDC at superhigh pressure
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摘要 Experimental and theoretical researches on the doping effect of interface binding state with homologous and heterogeneous dopants(d) in the system of PCD etc,as well as the action of intermediate layers between D /d at superhigh pressure and high temperature(HP-HT) are reported in this paper. Experimental and theoretical researches on the doping effect of interface binding state with homologous and heterogeneous dopants(d) in the system of PCD etc,as well as the action of intermediate layers between D /d at superhigh pressure and high temperature(HP-HT) are reported in this paper.
出处 《金刚石与磨料磨具工程》 CAS 北大核心 2008年第S1期68-69,共2页 Diamond & Abrasives Engineering
关键词 doping effect INTERFACE BINDING state PCD & PDC intermediate layer superhigh pressure- high temperature(HP-HT) INTERFACE BINDING characteristics equation(E_Dd) doping effect interface binding state PCD & PDC intermediate layer superhigh pressure- high temperature(HP-HT) interface binding characteristics equation(E_Dd)
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参考文献2

  • 1Shen Z T.Theory on Interface Binding in System of Synthetic Diamond[].Crystal Growth Science and Technology.1997
  • 2Shen M Y,Koyama S,Goto T,et al.The photoluminescence from ZnS/(ZnSe)/ZnS heterostructures[].Material Science and Engineering A.1996

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