二氧化硅反应离子刻蚀中的微负载效应研究

Study of Micro Loading Effect in RIE Etch of SiO_2

对二氧化硅反应离子刻蚀中反应室压力,刻蚀气体流量和射频功率等因素对刻蚀速率和刻蚀均匀性的影响进行了研究。结果表明,通过对反应室压力、刻蚀气体流量和射频功率的调节,可以降低微负载效应的影响,得到良好的刻蚀均匀性。

The influence of chamber pressure,gas flow rate and RF power on micro loading effect in reactive ion etch of silicon dioxide is researched.It is proved that the uniformity of etch rate can be improved and the effect of micro load can be decreased by adjusting the value of chamber pressure,gas flow rate and RF power properly.