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基于拉曼光谱仪的MEMS动态应力测试系统 被引量:1

Dynamic Stress Measurement System of MEMS Based on Raman Spectroscopy
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摘要 微机电系统(MEMS)动态应力的瞬态特性决定了传统的应力测试系统无法直接满足它的测试需要。介绍了一种依据高频调制原理设计实现的基于拉曼光谱仪的MEMS动态应力测试系统,该测试系统是一个典型的光—机—电集成的MEMS测试系统。利用此测试系统对硅微谐振器支撑梁根部的单点进行了动态应力测试,测试结果与理论分析相吻合。实验表明,此测试系统具有高精度、非接触式、无损伤等特点,能很好地满足MEMS动态应力测试的需求。 The transient characteristics of the dynamic stress of MEMS(Micro Electro Mechanical System)decides that it is hard to be measured directly by using the traditional stress measurement system.A new kind of dynamic stress measurement system of MEMS was revealed,which was based on Raman spectroscopy and high-frequency modulation principle,it was an integrated MEMS meas- urement system of light,mechanism,electricity.And using this system,the dynamic stress of a cer- tain point at the root of micro-resonator was measured,and the measurement results are matched with ones from the theoretical analysis.Experimental resalts indicate that this system has the charac- teristics of high accuracy,untouched and non destructivity,which is satisfied with the needs of dy- namic stress measurement of MEMS perfectly.
出处 《中国机械工程》 EI CAS CSCD 北大核心 2006年第S2期306-309,共4页 China Mechanical Engineering
基金 国家自然科学基金资助重点项目(50535030) 电子测试技术国家级重点实验室开放基金 微米纳米加工技术国家级重点实验室开放基金 山西省归国留学人员基金
关键词 动态应力 MEMS 拉曼光谱仪 高频调制 测试系统 dynamic stress MEMS Raman spectroscopy high-frequency modulation measurement system
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  • 1[3]C.Q.Davis, D.M.Freeman. Using a light microscope to measure motions with nanometer accuracy[J].Optical Engineering, 1998,37:1299~1304.
  • 2[4]Daniel J.Burns, Herbert F.Helbig. A system for automatic electrical and optical characterization of microelectromchanical devices [J].J. Microelectromech.Syst.,1999,8(4):473~482.
  • 3丁衡高.微机电系统的科学研究与技术开发[J].清华大学学报(自然科学版),1997,37(9):1-5. 被引量:22
  • 4张威,张大成,王阳元.MEMS概况及发展趋势[J].微纳电子技术,2002,39(1):22-27. 被引量:41

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  • 1Kim Y K,Kim E K,Kim S W. Low temperature epoxy bonding for wafer level MEMS packaging[J].Sensors and Actuators A:Physical,2008,(02):323-328.
  • 2Davies B R,Baker C C,Montague S. High-g MEMS integrated accelerometer[A].San Diego,California,USA,1997.52-62.
  • 3Tanner D M,Walraven J A,Helgesen K. MEMS reliability in shock environment[A].2000.129-138.
  • 4Zarnik M S,Rocak D,Macek S. Residual stresses in a pressure-sensor package induced by adhesive material during curing:Acasestudy[J].Sensors and Actuators A:Physical,2004,(03):442-449.
  • 5Tanner D M. MEMS reliability:Where are we now[J].Microelectronics Reliability,2009,(9/10/11):937-940.
  • 6Chou T L,Chu C H,Lin C T. Sensitivity analysis of packaging effect of silicon-based piezoresistive[J].Sensors and Actuators A:Physical,2009,(01):29-38.
  • 7Walwakar S S,Cho J. Evaluation of die stress in MEMS packaging:Experimental and theoretical approaches[J].Components and Packaging Technologies IEEE Transactions on Components and Package Technology,2006,(04):735-742.
  • 8Karagiozova D,Jones N. Influence of stress waves on the dynamic progressive and dynamic plastic buckling of cylindrical shells[J].International Journal of Solids and Structures,2001,(38/39):6723-6749.doi:10.1016/S0020-7683(01)00111-1.
  • 9Chen W,Zhang B,Forrestal M J. A split hopkinson bar technique for low-impedance materials[J].Experimental Mechanics,1999,(02):81-85.
  • 10Zhang W,Chen L,Xiong J. Ultra-high g deceleration time measurement for the penetration into steel target[J].International Journal of Impact Engineering,2007,(03):436-447.doi:10.1016/j.ijimpeng.2006.01.008.

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