摘要
采用紧束缚方法对多层低维半导体系统在有电子与声子作用情况下的I-V特性进行了研究.对计算结果进行分析后,探讨了将此系统应用到集成电路中所产生的影响.
The I-V peculiarty of muli-layer low-dimensional semicaonductor system including electron-phonon coupling intraction are investigated with the tight-binding method.After our results are assayed,the impact are discussed if the IC are made from the structure.
出处
《云南大学学报(自然科学版)》
CAS
CSCD
北大核心
2005年第S2期41-48,共8页
Journal of Yunnan University(Natural Sciences Edition)
关键词
共振隧穿
势阱
击穿
哈密顿量
resonance tunneling
the electron-phonon interaction
tight-binding
Hamiltonian