摘要
Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.
Scanning tunneling microscopy study revealed a van der Waals C60, solid film with 13% room-temperature lattice expansion on the GaAs(001) 2×4 surface. The mechanism involves fundamental Coulomb interaction due to charge transfer from the GaAs substrate. Theoretical calculation determines the charge transfer to be 1.76 electrons per C60 molecule. Oriented at its (110) crystallo-graphic axis this film also distinguishes itself from those formed on all other semiconductor and metal substrates where only the low-energy (111) hexagonal packing of C60 molecules was developed. It is shown that this is due to the one-dimensional confinement effect of the anisotropic substrate, which may have the prospect of controlling crystal growth.
