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Effect of target temperature on microstructure of aluminum surface layer modified by plasma based ion implantation

Effect of target temperature on microstructure of aluminum surface layer modified by plasma based ion implantation
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摘要 Aluminum (99.6% purity) was implanted with nitrogen ions to a total dose of 6×10 17 cm -2 at different temperatures (from 50 ℃ to 400 ℃) by plasma based ion implantation (PBII). The surface microstructure was investigated by glancing angle X ray diffraction (GXRD), X ray photoelectron spectroscopy (XPS) and cross sectional transmission electron microscopy (XTEM). The results of GXRD and XTEM showed that there was an amorphous layer on the outer surface, and fine dispersion of AlN precipitates was found under the amorphous layer. The size of AlN precipitates strongly depended on the target temperature, with the increase of the target temperature, the size of AlN precipitates became larger. The excess nitrogen atoms can diffuse or migrate to the lower nitrogen concentration regions by radiation enhanced diffusion. The results of XPS further indicated that it was easier to form AlN precipitates at a higher target temperature, and the depth profile of nitrogen broadened. Aluminum (99.6% purity) was implanted with nitrogen ions to a total dose of 6 x 10(17) cm(-2) at different temperatures (from 50 degrees C to 400 degrees C) by plasma based ion implantation (PBII) The surface microstructure was investigated by glancing angle X-ray diffraction (GXRD), X-ray photoelectron spectroscopy (XPS) and cross-sectional transmission electron microscopy (XTEM). The results of GXRD and XTEM showed that there was an amorphous layer on the outer surface, and fine dispersion of AIN precipitates was found under the amorphous layer. The size of AIN precipitates strongly depended on the target temperature, with the increase of the: target temperature, the size of AIN precipitates became larger. The excess nitrogen atoms can diffuse or migrate to the lower nitrogen concentration regions by radiation-enhanced diffusion. The results of XPS further indicated that it was easier to form AIN precipitates at a higher target temperature, and the depth profile of nitrogen broadened.
出处 《中国有色金属学会会刊:英文版》 CSCD 2000年第1期53-56,共4页 Transactions of Nonferrous Metals Society of China
基金 Foundationitem :Project 59771 0 59supportedbytheNationalNaturalScienceFoundationofChina
关键词 PLASMA BASED ion IMPLANTATION aluminum TARGET TEMPERATURE MICROSTRUCTURE plasma based ion implantation aluminum target temperature microstructure
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