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Resistance of the anodic PbO film formed in sulfuric acid solution 被引量:3

Resistance of the anodic PbO film formed in sulfuric acid solution
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摘要 The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting mat the interstitial liquid may serve as the major passage for ion transportation during the film growth. The resistance of the anodic PbO film formed on lead at 0.9 V (vs. Hg/Hg2SO4) in 4.5 mol/dm3 H2SO4 was measured using alternating-current impedance method. The resistance of the anodic PbO film was found to be close to that of the interstitial liquid among the PbO particles in the film, suggesting mat the interstitial liquid may serve as the major passage for ion transportation during the film growth.
出处 《Chinese Journal of Chemistry》 SCIE CAS CSCD 2000年第4期489-494,共6页 中国化学(英文版)
基金 Project supported by the National Natural Science Foundation of China (No. 29873013).
关键词 Anodic PbO film interstitial liquid ac impedance Anodic PbO film interstitial liquid ac impedance
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参考文献1

  • 1S. J. Xia,W. F. Zhou.Anodic film on lead-arsenic alloy in sulphuric acid medium[J].Journal of Applied Electrochemistry.1994(9)

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