As_2^+注入硅的辐射损伤和退火行为研究

RADIATION DAMAGE AND ANNEALING BEHAVIOR OF As_2^+ IMPLANTED SILICON

本文研究了500keV As_2^+和250keV As^+注入单晶硅引起的辐射损伤及其退火行为.结果表明,As_2^+注入比As^+注入在硅中引入更大的辐射损伤;经快速热退火后,两类注入样品均能消除损伤,获得高的杂质替位率和电激活率;As_2^+和As^+注入样品的载流子浓度的分布有所不同,这是由于As_2^+注入引入较大辐射损伤引起杂质的快速扩散所致.

The radiation damage and annealing behavior of <100> Si implanted with 500 keV As_2^+ and 250 keV As+ have been investigated. Experimental results show that the damage created by As2+ implantation is greater than that created by As+ implantation. After rapid thermal annealing, the complete recovery from crystal damage, high substitution and electrical activation of implanted atoms can be obtained for both the As2+ and As+ implantations. The carrier concentration profiles are different for the As2+ and As+ Implanted samples, which can be explained by the rapid diffusion of impurities resulting from the serious damage enhancement induced by As2+ implantation.