2KUBALL M, RIEDEL G J, POMEROY J W, et al. Time-resolved temperature measurement of A1GaN/GaN electronic devices using micro-Raman spectroscopy [ J]. IEEE Electron Device Letters, 2012, 28 (2) : 86-89.
3PROFUMO F, ZHU Y J. Transient junction temperature evaluation of high power diode (thyristor) transient cur- rent [ J ]. Converter Technology and Electric Traction, 2000 (2): 20-26 (in Chinese).
4ABDULKHAEV O A, YODGOROVA D M, KARIMOV A V, et al. Investigation of the heat transfer processes under the action of pulse power [ J]. Journal of Engi- neering Physics and Thermophysics, 2012, 85 (4): 851-855.
5陈焕庭.功率型LED热学特性分析以及可靠性研究[D].厦门:厦门大学,2011.
6ZHU Y J, MIAO Q H, ZHANG X H, et al. Real timemeasurement and online measurement of junction tempera- ture of semiconductor power devices [ J]. Semiconductor Journal, 2007, 28 (6): 980-983 (in Chinese).
7HUH Q, ZHANG W C. Real time on-line measuring me- thod for rectifying junction temperature of rectifier tube [ J ]. Electronic World, 2013 (17): 60-61 (in Chinese).
8MUSALLAM M, JOHNSON C M. Real-time compact thermal models for health management of power electro- nics [J]. IEEE Transactions on Power Electronics, 2012, 25 (6): 1416-1425.
9LAI P, WANG Y S. DC and dynamic thermal characte- ristics detection of pulsed power devices [ J]. Reliability and Environmental Testing of Electronic Products, 2002 (5): 1-5 (in Chinese).
10XI Y, SCHUBERT E F. Junction-temperature measure- ment in GaN ultraviolet light-emitting diodes using diode forward voltage method ~ J]. Applied Physics Letters, 2014, 85 (12): 2163-2165.
