半导体器件电热耦合模拟程序的开发与应用

Semiconductor device electro thermal simulator and its application

开发了一个半导体器件的电热耦合器件模拟程序。它以双重能量传输模型为基础，包括了晶格中的热扩散以及载流子的产生、复合所造成的能量变化，考虑了载流子能流对整个热系统的影响。根据电热耦合模拟的特点，本程序采用了组解耦法和异时间步长法两种算法。组解耦法的运算速度是传统算法（全Ｎｅｗｔｏｎ法）的２～３倍而内存空间可节省一半。本程序已被集成到器件模拟软件ＰＩＳＣＥＳ－２Ｈ中。对一个ＳＯＩ结构的负阻效应和瞬态特性的模拟结果表明，该程序能够正确模拟器件发热情况以及自热对器件特性的主要影响。

This paper presents an electro thermal device simulation program which is based on the Dual Energy Transport model, consists of the energy change due to the thermal diffusion of lattice and the generation recombination of carries, and considers the influence of energy flux of carries on the thermal system. According to the characteristics of electro thermal simulation, two new methods, group decoupled (group Gummel) method and different time step method, are realized in this program. The calculation speed of group decoupled method is 2 or 3 times of that of the traditional method and the memory space of the former is only half of the later. This program has been integrated into device simulator PISCES 2H. The results of negative resistance effect and transient characteristics of a SOI structure prove that the program can correctly simulate the main phenomena caused by self heating effect.