摘要
A new tutmeling junction can be formed by an insulator layer inserting into a quantum well, and in the quantum well, a quasi-plane tunneling current can be formed by applying a tunneling voltage. If a P-N junction is grown on the quantum well, the tunneling current can be modulated by a P-N junction-bias voltage. The modulated quasi-plane tunneling current is not only related to the bias voltage, but also to the depth of the quantum well. It is analyzed that the P-N junction-bias voltage how to affect the tunneling current and a method of measuring the depth of the quantum well is presented.
A new tutmeling junction can be formed by an insulator layer inserting into a quantum well, and in the quantum well, a quasi-plane tunneling current can be formed by applying a tunneling voltage. If a P-N junction is grown on the quantum well, the tunneling current can be modulated by a P-N junction-bias voltage. The modulated quasi-plane tunneling current is not only related to the bias voltage, but also to the depth of the quantum well. It is analyzed that the P-N junction-bias voltage how to affect the tunneling current and a method of measuring the depth of the quantum well is presented.
